Capacity: 512GB Form Factor: M.2 2280 Interface: PCIe Gen 3x4 NVMe Read Speed: Up to 2,400 MB/s Write Speed: Up to 1,900 MB/s NAND Flash Type: 3D NAND Controller: SMI (Silicon Motion) MTBF (Mean Time Between Failures): 1.5 million hours Endurance: 360 TBW (Terabytes Written) Power Consumption: Active: 3.5W Idle: 0.2W Operating Temperature: 0°C to 70°C Shock Resistance: 1500G/0.5ms