Capacity: 512GB Form Factor: M.2 2280 Interface: PCIe Gen3 x4 NAND Technology: 3D NAND Sequential Read Speed: Up to 1,800 MB/s Sequential Write Speed: Up to 1,700 MB/s Random Read IOPS: Up to 250,000 IOPS Random Write IOPS: Up to 200,000 IOPS Endurance (TBW): 160 TBW (Total Bytes Written) MTBF (Mean Time Between Failures): 1.5 million hours Operating Temperature: 0°C to 70°C Shock Resistance: Up to 1500G